Title :
Giant resistive switching effects in symmetric all-oxide tunnel junctions with La2/3Sr1/3MnO3 electrodes
Author :
Qin, Q. ; Akaslompolo, L. ; Yao, L. ; Majumdar, S. ; Vijayakumar, J. ; Chen, B. ; Van Dijken, S.
Author_Institution :
Aalto Univ., Espoo, Finland
Abstract :
This study demonstrates the switching behavior of nominally symmetric tunnel junctions that are comprised of two La2/3Sr1/3MnO3 electrodes separated by a ferroelectric PbZr0.2Ti0.8O3 or BaTiO3 tunnel barrier, or a paraelectric SrTiO3 tunnel barrier. Transmission electron microscopy measurements indicate that the structural and chemical symmetry of the junctions is broken at the tunnel barrier interfaces. Electrical transport measurements are preformed on Hall bar structures by scanning probe microscopy.
Keywords :
Hall effect; barium compounds; electrical conductivity transitions; electrical resistivity; ferroelectric materials; interface structure; lanthanum compounds; lead compounds; scanning probe microscopy; strontium compounds; transmission electron microscopy; tunnelling; Hall bar structures; La0.67Sr0.33MnO3-BaTiO3; La0.67Sr0.33MnO3-PbZr0.2Ti0.8O3; La0.67Sr0.33MnO3-SrTiO3; chemical symmetry; electrical transport measurements; electrodes; ferroelectric tunnel barrier; giant resistive switching effects; paraelectric tunnel barrier; scanning probe microscopy; structural symmetry; symmetric all-oxide tunnel junctions; transmission electron microscopy; Electrical resistance measurement; Electrodes; Junctions; Resistance; Switches; Tunneling;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157352
