DocumentCode :
722169
Title :
Possible explanation for observed effectiveness of voltage controlled anisotropy
Author :
Ahmed, R. ; Victora, R.H.
Author_Institution :
Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA
fYear :
2015
fDate :
11-15 May 2015
Firstpage :
1
Lastpage :
1
Abstract :
This article presents calculation of magnetic anisotropy using the LKKR method employing the local spin density approximation. Micromagnetic simulation is used to calculate magnetization switching in the CoFeB-MgO interface. Experimental measurements rely on the large demagnetization energy nearly cancelling the interfacial anisotropy locally, thus over emphasizing the small effect of the voltage and leading to domain wall motion during the switching process.
Keywords :
boron alloys; cobalt alloys; demagnetisation; density functional theory; interface magnetism; iron alloys; magnesium compounds; magnetic anisotropy; magnetic domain walls; magnetic switching; micromagnetics; CoFeB-MgO; LKKR method; demagnetization energy; domain wall motion; interfacial anisotropy; local spin density approximation; magnetic anisotropy; magnetization switching; micromagnetic simulation; voltage-controlled anisotropy; Anisotropic magnetoresistance; Approximation methods; Current density; Films; Magnetization; Switches; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
Type :
conf
DOI :
10.1109/INTMAG.2015.7157501
Filename :
7157501
Link To Document :
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