Title :
Dependence of spin-dependent transport signals on measurement frequency in CoFe/MgO/ n+-Si junctions
Author :
Inokuchi, T. ; Ishikawa, M. ; Sugiyama, H. ; Saito, Y.
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
This study aims to investigate the relationship between localized states and spin-dependent transport properties by means of dependence of the differential conductance and inelastic electron tunnelling signals on the measurement frequency. It is shown that the differential conductance decreases with increase in the measurement frequency. The results indicate that the extrinsic spin dependent signals, originates from localized states/interface traps, can be separated by measuring dependence of differential conductance on the measurement frequency.
Keywords :
MIS structures; cobalt alloys; electrical conductivity; elemental semiconductors; interface states; iron alloys; localised states; magnesium compounds; silicon; spin polarised transport; tunnelling; CoFe-MgO-Si; differential conductance; inelastic electron tunnelling; interface traps; localized states; measurement frequency; spin-dependent transport; Amplifiers; Electrodes; Frequency measurement; Gold; Junctions; Semiconductor device measurement;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157504
