Effect of Ta thickness and annealing temperature on the perpendicular magnetic anisotropy in MTJ stack with CoFeB/Ta/[Co/Pd]n as top electrode

Author

Yuhong, Z. ; Meng, Z. ; Han, G. ; Teo, K.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

High tunneling magnetoresistance (TMR) have recently been realized in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions (p-MTJs). However, the perpendicular magnetic anisotropy (PMA) is still low. Ferromagnetic multilayers is known to show a high PMA, which can be combined into composite electrode such as CoFeB/Ta/[Co(Fe)/Pd(Pt)]_n to increase the thermal stability. In this kind of composite electrode, the Ta spacer layer play a critical role In this study, we investigate the effect of Ta thickness and annealing effect on the PMA in p-MTJ stack using CoFeB/Ta/[Co/Pd]_n as the top electrodes.

Keywords

annealing; boron alloys; cobalt; cobalt alloys; ferromagnetic materials; iron alloys; magnetic multilayers; palladium; perpendicular magnetic anisotropy; tantalum; CoFeB-Ta-[Co-Pd]_n; MTJ stack; annealing temperature; composite electrode; ferromagnetic multilayers; perpendicular magnetic anisotropy; perpendicular magnetic tunnel junctions; spacer layer; thermal stability; top electrode; tunneling magnetoresistance; Annealing; Electrodes; Magnetic hysteresis; Magnetic tunneling; Nonhomogeneous media; Perpendicular magnetic anisotropy;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157506

Filename

7157506