Title :
Influence of different buffers on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy
Author :
Frankowski, M. ; Zywczak, A. ; Czapkiewicz, M. ; Zietek, S. ; Kanak, J. ; Banasik, M. ; Powroznik, W. ; Skowronski, W. ; Checinski, J. ; Wrona, J. ; Stobiecki, T.
Author_Institution :
Dept. of Electron., AGH Univ. of Sci. & Technol., Krakow, Poland
Abstract :
Magnetic Tunnel Junctions (MTJs) with Perpendicular Magnetic Anisotropy (PMA) have recently brought a significant attention in view of application as high-density non-volatile Magnetic Random Access Memory (MRAM) due to their possible low critical current density, good thermal stability and downscalable junction size [1]. As the PMA can be affected by the MTJ layer structure, these properties can also be modified significantly, creating an opportunity for further improvement of the magnetic memory technology based on MTJs.
Keywords :
MRAM devices; buffer layers; cobalt compounds; critical currents; iron compounds; magnesium compounds; magnetic tunnelling; perpendicular magnetic anisotropy; ruthenium; tantalum; thermal stability; Fe60Co20B20-MgO-Fe60Co20B20-Ta-Ru; MRAM; MTJ layer structure; buffers; critical current density; high-density nonvolatile magnetic random access memory; magnetic dead layer; magnetic memory technology; magnetic tunnel junctions; perpendicular magnetic anisotropy; thermal stability; Annealing; Critical current density (superconductivity); Magnetic domains; Magnetic tunneling; Perpendicular magnetic anisotropy; Thermal stability;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157507
