Influence of different buffers on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

Author

Frankowski, M. ; Zywczak, A. ; Czapkiewicz, M. ; Zietek, S. ; Kanak, J. ; Banasik, M. ; Powroznik, W. ; Skowronski, W. ; Checinski, J. ; Wrona, J. ; Stobiecki, T.

Author_Institution

Dept. of Electron., AGH Univ. of Sci. & Technol., Krakow, Poland

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

Magnetic Tunnel Junctions (MTJs) with Perpendicular Magnetic Anisotropy (PMA) have recently brought a significant attention in view of application as high-density non-volatile Magnetic Random Access Memory (MRAM) due to their possible low critical current density, good thermal stability and downscalable junction size [1]. As the PMA can be affected by the MTJ layer structure, these properties can also be modified significantly, creating an opportunity for further improvement of the magnetic memory technology based on MTJs.

Keywords

MRAM devices; buffer layers; cobalt compounds; critical currents; iron compounds; magnesium compounds; magnetic tunnelling; perpendicular magnetic anisotropy; ruthenium; tantalum; thermal stability; Fe₆₀Co₂₀B₂₀-MgO-Fe₆₀Co₂₀B₂₀-Ta-Ru; MRAM; MTJ layer structure; buffers; critical current density; high-density nonvolatile magnetic random access memory; magnetic dead layer; magnetic memory technology; magnetic tunnel junctions; perpendicular magnetic anisotropy; thermal stability; Annealing; Critical current density (superconductivity); Magnetic domains; Magnetic tunneling; Perpendicular magnetic anisotropy; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157507

Filename

7157507