Title :
Piezo-voltage manipulation of the magnetization and magnetic reversal in Fe/GaAs
Author :
Zhang, B. ; Wang, K. ; Li, Y. ; Zhang, H. ; Yang, M. ; Meng, K. ; Lu, J. ; Zhao, J.
Author_Institution :
Inst. of Semicond., Beijing, China
Abstract :
Electric field control of the ferromagnetic magnetization process has become increasingly important because its great potential applications for the memory device, magnetic logic, magneto-electric sensor and the integration of magnetic functionalities into electronic circuits. Since the magneto crystalline anisotropy is originated from the spin-orbital coupling of the materials, modification of lattice constant using piezo voltage can thus directly manipulate the magnetic anisotropy and the magnetization reversal. In the past decade, the semiconductor spintronics including spin injection, spin transport and spin Hall effect based on the Fe/n-GaAs heterostructure have been extensively studied. However, to our knowledge, till now there isn´t any report about the manipulation of the ferromagnetization based on the Fe/n-GaAs heterostructure. In this work, we carefully investigated the piezo voltage manipulation of the magnetic properties of the Fe/n-GaAs/piezoelectric heterostructure.
Keywords :
III-V semiconductors; ferromagnetic materials; gallium arsenide; interface magnetism; iron; magnetisation reversal; piezoelectricity; Fe-GaAs; Fe/n-GaAs/piezoelectric heterostructure; electric field control; electronic circuits; ferromagnetic magnetization process; ferromagnetization manipulation; lattice constant modification; magnetic anisotropy; magnetic functionality integration; magnetic logic; magnetic reversal; magnetization reversal; magnetocrystalline anisotropy; magnetoelectric sensor; memory device; piezovoltage manipulation; semiconductor spintronics; spin Hall effect; spin injection; spin transport; spin-orbital coupling; Iron; Magnetic fields; Magnetic hysteresis; Magnetization; Perpendicular magnetic anisotropy; Strain;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157530