Title :
Nonlinear effect on diode-assisted magnetoresistance in semiconductors
Author :
Luo, Z. ; Zhang, X. ; Xiong, C. ; Chen, J.
Author_Institution :
Sch. of Mater. Sci. & Eng., Tsinghua Univ., Beijing, China
Abstract :
In diode-assisted MR, large MR appears in the resistance transition region and its value is related to the transition resistance difference . The diode, as a nonlinear electric component, causes this resistance transition and plays an important role in the MR performance . Here, we systemically study the nonlinear effect of diode on the diode-assisted MR . This work would help to understand the nonlinear effect on MR and offer the guidance to design new MR device with larger MR value and higher low magnetic field sensitivity .
Keywords :
magnetoresistance; magnetoresistive devices; semiconductor diodes; diode-assisted magnetoresistance; magnetic field sensitivity; magnetoresistance device; nonlinear effect; nonlinear electric component; resistance transition region; semiconductors; Electrodes; Magnetic fields; Magnetoresistance; Resistance; Resistors; Semiconductor diodes; Silicon;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157559
