DocumentCode :
722274
Title :
Perpendicular magnetic anisotropy in Ta/Pd (0–10 nm)/Co2FeAl0.5Si0.5/MgO/Ta structured films
Author :
Fu, H. ; You, C. ; Zhang, X. ; Tian, N.
Author_Institution :
Sch. of Mater. Sci. Eng., Xi´an Univ. of Technol., Xian, China
fYear :
2015
fDate :
11-15 May 2015
Firstpage :
1
Lastpage :
1
Abstract :
In this work, the film stacks of Ta (8 nm)/Pd (t=0-10 nm)/Co2FeAl0.5Si0.5 (3.2 nm)/MgO (2 nm)/Ta (6 nm) (hereinafter refer to Ta/Pd (t)/CFAS/MgO/Ta) were fabricated on the Si substrate by magnetron sputtering system under a base pressure better than 3×10-5 Pa at room temperature. The influence of the thickness of inserting Pd layer on the PMA was investigated in detail.
Keywords :
aluminium alloys; cobalt alloys; iron alloys; magnesium compounds; magnetic multilayers; magnetic thin films; palladium; perpendicular magnetic anisotropy; silicon alloys; sputter deposition; tantalum; Pd layer thickness; Si; Si substrate; Ta-Pd-Co2FeAl0.5Si0.5-MgO-Ta; film stacks; magnetron sputtering system; perpendicular magnetic anisotropy; size 0 nm to 10 nm; temperature 293 K to 298 K; Annealing; Critical current density (superconductivity); Films; Perpendicular magnetic anisotropy; Saturation magnetization; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
Type :
conf
DOI :
10.1109/INTMAG.2015.7157632
Filename :
7157632
Link To Document :
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