Magnetization and X-ray absorption spectroscopy of Mn implanted Ge after flash lamp annealing

Ge-based diluted magnetic semiconductors have drawn extensive attention over the past decades due to their potential to be applied in spintronic devices and to be integrated with the mainstream Si microelectronics as well. The hole-mediated effect in diluted magnetic semiconductors provides the possibility to realize the control of magnetic properties by the electrical control of free carriers. In this contribution, we will present the magnetic properties and X-ray absorption spectroscopy of Mn implanted Ge annealed by flash lamp, which is a sub-second annealing method and compatible with chip-technology.