Title :
Magnetic properties and magnetization dynamics of magnetic tunnel junctions bottom electrode with different buffer layers
Author :
Wrona, J. ; Kanak, J. ; Banasik, M.J. ; Zietek, S. ; Skowronski, W. ; Stobiecki, T.
Author_Institution :
Singulus Technol. AG, Kahl am Main, Germany
Abstract :
Intensified work on Magnetic Tunnel Junctions (MTJs) allowed creating non-volatile Magnetic Random Access Memory (MRAM) which further enhances research on MTJs to achieve high performance of non-volatile devices [1]. The magnetic properties of CoFeB layers strongly depend on the choice of the buffer layers in a buffer/CoFeB/MgO/capping structure and its appropriate selection can provide more effective magnetic parameters [2, 3].
Keywords :
MRAM devices; buffer layers; cobalt compounds; iron compounds; magnesium compounds; magnetic thin films; magnetic tunnelling; CoFeB-MgO; MRAM; buffer layers; buffer-CoFeB-MgO-capping structure; magnetic parameters; magnetic properties; magnetic tunnel junction bottom electrode; magnetization dynamics; nonvolatile magnetic random access memory; Anisotropic magnetoresistance; Buffer layers; Magnetic hysteresis; Magnetic tunneling; Magnetization; Rough surfaces; Surface roughness;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157690
