DocumentCode
722383
Title
Efficient dual spin-valley filter in strained silicene
Author
Yesilyurt, I.C. ; Liang, G. ; Jalil, M.B.
Author_Institution
Electr. & Comput. Enginnering, Nat. Univ. of Singapore, Singapore, Singapore
fYear
2015
fDate
11-15 May 2015
Firstpage
1
Lastpage
1
Abstract
A two-barrier device is proposed in this work which can create valley-spin polarization and filtering function in strain engineered silicene. The device consists of two parts: 1) a region of uniaxial strain and exchange field arising from the adjacent top and bottom magnetic insulators, and 2) a region with magnetic field arising from two ferromagnetic stripes, and an electrochemical potential generated by top and bottom gates.
Keywords
elemental semiconductors; exchange interactions (electron); ferromagnetic materials; filters; magnetoelectronics; silicon; Si; dual spin-valley filter; electrochemical potential; exchange field; ferromagnetic stripes; filtering function; magnetic field; magnetic insulators; strain engineered silicene; two-barrier device; uniaxial strain; valley-spin polarization; Electric potential; Graphene; Logic gates; Magnetic confinement; Magnetic field induced strain; Magnetic separation; Strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4799-7321-7
Type
conf
DOI
10.1109/INTMAG.2015.7157756
Filename
7157756
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