Title :
Nano-channel InAlN/GaN Fin-HEMTs for ultra-high-speed electronics
Author :
Arulkumaran, S. ; Ng, G.I.
Author_Institution :
Temasek Labs., Nanyang Technol. Univ.-NTU, Singapore, Singapore
Abstract :
A stress engineered nano-channel (NC) In0.17Al0.83N/GaN T-gate Fin-High-Electron-Mobility Transistor (Fin-HEMT) exhibited a very high IDmax of >3900 mA/mm, a highest gm of >1410 mS/mm and Vth of -3.31 V at VD= 6V with good pinch-off characteristics. This dramatic increase of ID, gm and extracted electron velocity (νe) of 6.0×107 cm/s in the In0.17Al0.83N/GaN NC Fin-HEMT is due to the tensile stress by T-shape gate and SiN passivation. The Fin-HEMTs were also exhibited impressive device performance (gm=646 mS/mm, Ion=1.03 A/mm, IOFF=1.13 μA/mm, ION/IOFF~106, SS=82 mV/dec) even at VD of 0.5 V.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; passivation; wide band gap semiconductors; InAlN-GaN; T-shape gate; extracted electron velocity; high-electron-mobility transistor; nano-channel Fin-HEMT; passivation; tensile stress; ultra-high-speed electronics; voltage -3.31 V; voltage 0.5 V; voltage 6 V; Gallium nitride; HEMTs; Logic gates; MODFETs; Passivation; Silicon; Silicon compounds; Fin-HEMT; InAlN/GaN; Low Drain Voltage; Nano-Channel; SiN Passivation; Stress Engineering;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158490
