Title :
Simulation study of NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate
Author :
Oishi, Toshiyuki ; Higashi, Ryutaro ; Harada, Kazuya ; Koga, Yuta ; Kasu, Makoto ; Hirama, Kazuyuki
Author_Institution :
Dept. of Electr. & Electron. Eng., Saga Univ., Saga, Japan
Abstract :
This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which have very good DC/RF characteristics and thermally stable operation. The NO2 adsorption and H terminated layer were replaced to fixed charges at the interface between the Al2O3 insulator and diamond. The simulation results agreed qualitatively with the experimental data. The formation of the two dimensional hole gas at on-state was confirmed at on-state. Moreover, drain current response was calculated for sinusoidal input of the gate electrode.
Keywords :
diamond; field effect transistors; two-dimensional electron gas; Al2O3; H-terminated diamond FET; drain current response; gate electrode; insulator gate; sinusoidal input; two dimensional hole gas; Adsorption; Aluminum oxide; Diamonds; Field effect transistors; Insulators; Logic gates; Two dimensional hole gas; Al2O3 insulator gate; NO2 exposed; device simulation; diamond FET; fixed charge model;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158536
