Title :
Electrical characterization of GaAs/GaAs bonding interfaces
Author :
Chai, L. ; Liang, J. ; Nishida, S. ; Morimoto, M. ; Shigekawa, N.
Author_Institution :
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
Abstract :
The electrical properties of GaAs/GaAs junctions fabricated by using surface-activated bonding (SAB) were investigated. We extracted the potential barrier heights at 300-°C-annealed GaAs/GaAs interfaces from their current-voltage characteristics measured at varied ambient temperatures and estimated the energy of charge neutral level ECNL and the density of interface states Dit.
Keywords :
III-V semiconductors; annealing; bonding processes; current density; electronic density of states; gallium arsenide; interface states; p-n junctions; semiconductor epitaxial layers; semiconductor growth; vacuum deposition; vapour phase epitaxial growth; GaAs-GaAs; GaAs-GaAs bonding interfaces; GaAs-GaAs junctions; annealing; current-voltage characteristics; density-of-interface states; electrical properties; energy-of-charge neutral level; potential barrier heights; surface-activated bonding; temperature 300 degC; varied ambient temperatures; Annealing; Bonding; Current measurement; Gallium arsenide; Junctions; Substrates; Temperature measurement; GaAs; Si; bonding interface; tandem solar cells;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158541
