• DocumentCode
    722799
  • Title

    Electrical properties of n+-Si/n-GaN junctions by room temperature bonding

  • Author

    Nishimura, T. ; Liang, J. ; Shigekawa, N. ; Watanabe, N.

  • Author_Institution
    Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
  • fYear
    2015
  • fDate
    4-5 June 2015
  • Firstpage
    46
  • Lastpage
    47
  • Abstract
    The electrical properties of n+-Si/n-GaN junctions by room-temperature bonding were investigated. The n+-Si/n-GaN junctions exhibited linear current-voltage characteristics.
  • Keywords
    III-V semiconductors; bonding processes; elemental semiconductors; gallium compounds; semiconductor heterojunctions; silicon; wide band gap semiconductors; Si-GaN; electrical properties; linear current-voltage characteristics; n+-Si-n-GaN junctions; room temperature bonding; Annealing; Bonding; Gallium nitride; Resistance; Silicon; Temperature; Temperature measurement; GaN; Si; surface activated bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-8614-9
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2015.7158542
  • Filename
    7158542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=722799