Title :
Current collapse in AlGaN/GaN HEMTs with a GaN cap layer
Author :
Yoshida, S. ; Sakaida, Y. ; Asubar, J.T. ; Tokuda, H. ; Kuzuhara, M.
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
This paper describes electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with a GaN cap layer. The maximum drain current was kept constant at around 0.4 A/mm for a GaN cap layer thickness up to 5 nm. It was found that the degree of current collapse was gradually improved when the GaN cap thickness was increased from 0 (without cap) to 10 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; cap layer; current collapse; electrical characteristics; high electron mobility transistors; maximum drain current; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Plasmas; Wide band gap semiconductors; AlGaN/GaN HEMT; current collapse; gan cap layer;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158543
