Title :
Electrical conduction mechanisms of thin zinc-oxide films prepared by RF sputtering
Author :
Jiesheng Zhang ; Saitoh, Tadashi ; Omura, Yasuhisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Kansai Univ., Suita, Japan
Abstract :
Various ZnO films are deposited on p-type Si substrates overlaid with SiO2 surfaces. The ZnO films are deposited by an RF sputtering technique under ambient atmosphere of Ar gas or O2/Ar mixture gas, followed by annealing at 700 C under O2 or N2. Atomic composition, chemical binding states, and electrical properties are analyzed. It is revealed that ambient gas for the sputtering process and the annealing process rules the electrical property.
Keywords :
II-VI semiconductors; annealing; electrical conductivity; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; N2 gas; O2-Ar mixture gas; RF sputtering; Si-SiO2; ZnO; ambient atmosphere; annealing; atomic composition; chemical binding states; electrical conduction mechanisms; electrical property; p-type Si substrates; temperature 700 degC; thin zinc oxide films; Annealing; Atomic layer deposition; Films; II-VI semiconductor materials; Radio frequency; Sputtering; Zinc oxide; I–V characteristics; XPS; ZnO; oxygen vacancy;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158547
