Electrical conduction mechanisms of thin zinc-oxide films prepared by RF sputtering

Author

Jiesheng Zhang ; Saitoh, Tadashi ; Omura, Yasuhisa

Author_Institution

Dept. of Electr. & Electron. Eng., Kansai Univ., Suita, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

56

Lastpage

57

Abstract

Various ZnO films are deposited on p-type Si substrates overlaid with SiO₂ surfaces. The ZnO films are deposited by an RF sputtering technique under ambient atmosphere of Ar gas or O₂/Ar mixture gas, followed by annealing at 700 C under O₂ or N2. Atomic composition, chemical binding states, and electrical properties are analyzed. It is revealed that ambient gas for the sputtering process and the annealing process rules the electrical property.

Keywords

II-VI semiconductors; annealing; electrical conductivity; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; N₂ gas; O₂-Ar mixture gas; RF sputtering; Si-SiO₂; ZnO; ambient atmosphere; annealing; atomic composition; chemical binding states; electrical conduction mechanisms; electrical property; p-type Si substrates; temperature 700 degC; thin zinc oxide films; Annealing; Atomic layer deposition; Films; II-VI semiconductor materials; Radio frequency; Sputtering; Zinc oxide; I–V characteristics; XPS; ZnO; oxygen vacancy;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158547

Filename

7158547