Two-dimensional model for asymmetric double-gate tunnel FET considering the source-channel junction depletion region

Author

Hongfei Lv ; Sato, Shingo ; Omura, Yasuhisa ; Mallik, Abhijit

Author_Institution

Grad. Sch. of Eng., Kansai Univ., Suita, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

58

Lastpage

59

Abstract

This paper presents a 2-D potential model for the asymmetric double-gate tunnel FET (ADG-TFET) that well considers the source-channel junction depletion region. The model derives a closed and analytical form derived from the 2D Poisson equation by using the conformal mapping technique. Potential function and electric field function are given by appropriate boundary conditions. We use a commercial TCAD simulator to verify the model.

Keywords

Poisson equation; conformal mapping; field effect transistors; semiconductor device models; 2D Poisson equation; asymmetric double-gate tunnel FET; conformal mapping technique; electric field function; potential function; source-channel junction depletion region; two-dimensional model; Analytical models; Conformal mapping; Electric potential; Junctions; Logic gates; Mathematical model; Poisson equations; Asymmetric TFET; Double-Gate TFET; TCAD;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158548

Filename

7158548