Title :
Interface characteristics of Si/Si junctions by using surface-activated bonding
Author :
Yamajo, S. ; Morimoto, M. ; Liang, J. ; Shigekawa, N.
Author_Institution :
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
Abstract :
We investigated the electrical properties of highly-doped n-Si/n-Si and p-Si/p-Si junctions fabricated by using the surface activated bonding. Heights of potential barrier formed at the respective bonding interface were estimated by measuring dependence of their current-voltage characteristics on the ambient temperature. The heights of barrier were found to be varied due to annealing often the bonding process. An analysis using the charge neutral level model suggested that the density of interface states that were likely to be formed during the surface activation process was lowered to ~1012cm-2eV-1 due to the annealing, similarly to results for more heavily doped Si/Si junctions.
Keywords :
annealing; bonding processes; electronic density of states; elemental semiconductors; heavily doped semiconductors; interface states; p-n heterojunctions; semiconductor growth; silicon; Si-Si; ambient temperature; annealing; barrier heights; bonding interface; charge neutral level; current-voltage characteristics; density-of-interface states; electrical properties; highly-doped n-Si-n-Si junctions; interface characteristics; p-Si-p-Si junctions; potential barrier; surface activation process; surface-activated bonding; Annealing; Bonding; Interface states; Junctions; Silicon; Substrates; Temperature measurement; Si; interface states density; surface activated bonding;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158550
