Title :
Effective normal field of average inversion layer for InGaAs n-channel MOSFETs
Author :
Goto, Yuta ; Hiroki, Akira ; Matsuda, Akihiro
Author_Institution :
Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan
Abstract :
This paper describes an effective normal field dependence of the average inversion layer depth for InGaAs MOSFETs. We evaluate the average inversion layer depth calculated by the conventional model in the circuit simulator. The results are compared with the quantum effect model. Also, we evaluate the quantum effect on the drain current. It is found that the accurate modeling of the quantum effect in the inversion layer is needed in modeling of the drain current.
Keywords :
III-V semiconductors; MOSFET; indium compounds; inversion layers; InGaAs; average inversion layer; drain current; n-channel MOSFET; normal field dependence; quantum effect model; Indium gallium arsenide; Integrated circuit modeling; Logic gates; MOSFET; MOSFET circuits; Mathematical model; Semiconductor device modeling; InGaAs n-channel MOSFETs; average inversion layer depth; effective normal field;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158552
