Title :
Hall effect in a p-type poly-Si thin-film transistor with Hall terminals
Author :
Shiga, Haruki ; Yoshikawa, Akito ; Matsumoto, Takaaki ; Miyamura, Shogo ; Matsuda, Tokiyoshi ; Kimura, Mutsumi ; Ozawa, Tokuro ; Aoki, Koji ; Chih-Che Kuo
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
We fabricated a p-type poly-Si thin-film transistor with Hall terminals and evaluated the Hall voltage by applying gate voltage, drain voltage, and magnetic field. We found that the Hall voltage is dependent on the magnetic field when the gate voltage is beyond a threshold voltage.
Keywords :
Hall effect; elemental semiconductors; magnetic fields; silicon; thin film transistors; Hall effect; Hall terminals; Hall voltage; Si; drain voltage; gate voltage; magnetic field; p-type poly-Si thin film transistor; Films; Logic gates; Magnetic fields; Magnetic sensors; Thin film transistors; Threshold voltage; Hall effect; Hall terminal; p-type; poly-Si; thin-film transistor (TFT);
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158558
