Title : 
Fabrication of the solar-blind photodetector based on NixMg1−xO films by radio-frequency sputtering
         
        
            Author : 
Nishitani, H. ; Ohta, K. ; Inada, M. ; Shimizu, T. ; Shingubara, S. ; Saitoh, T.
         
        
            Author_Institution : 
Kansai Univ., Suita, Japan
         
        
        
        
        
        
            Abstract : 
Solar-blind photodetectors are fabricated with NixMg1-xO films that are formed on MgO single crystal substrate using a simple RF sputtering technique and a Ni-Mg composite target. The optical bandgap increases from 3.61 to 3.95eV as the Ni concentration decreases from 1 to 0.52. Photoconductors with interdigitated electrodes are fabricated using the sputtered NixMg1-xO films. The device based on Ni0.52Mg0.48O exhibits a peak response at a wavelength of 270nm with a cutoff wavelength of 295nm. The peak and the cutoff wavelengths of responsivity shift toward shorter wavelengths with decreasing Ni concentration.
         
        
            Keywords : 
composite materials; electrochemical electrodes; nickel compounds; photoconducting materials; photodetectors; sputter deposition; thin film sensors; Ni0.52Mg0.48O; NixMg1-xO; RF sputtering technique; composite target; electron volt energy 3.61 eV to 3.95 eV; interdigitated electrode; optical bandgap; photoconductor; radiofrequency sputtering; single crystal substrate; solar-blind photodetector photodetector; wavelength 270 nm; wavelength 295 nm; Films; Nickel; Photodetectors; Photonic band gap; Radio frequency; Sputtering; Substrates; MgO substrate; NiMgO; solar-blind; sputtering;
         
        
        
        
            Conference_Titel : 
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
         
        
            Conference_Location : 
Kyoto
         
        
            Print_ISBN : 
978-1-4799-8614-9
         
        
        
            DOI : 
10.1109/IMFEDK.2015.7158563