Title :
Evaluation of SnO2 / Al2O3 thin film deposited by RF magnetron sputtering
Author :
Ogawa, Junji ; Yoshioka, Toshihiro ; Yuge, Masahiro ; Matsuda, Tokiyoshi ; Kimura, Mutsumi
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
Rare metal free SnO2 / Al2O3 thin film semiconductor was evaluated for applications of thin film transistor (TFT) active channel layer. The film was deposited with RF magnetron sputtering using mixed SnO2 / Al2O3 powder target. The transmittance of the SnO2 / Al2O3 film was higher than 80 %. The sheet resistance of the film could be controlled by the deposition condition. Therefore, the SnO2 / Al2O3 thin film would be applicable for the active layer of transparent TFT.
Keywords :
aluminium compounds; rare earth metals; semiconductor thin films; sputtering; thin film transistors; tin compounds; Al2O3; RF magnetron sputtering; SnO2; mixed powder target; rare metal free thin film semiconductor; thin film transistor active channel layer; transparent TFT; Aluminum oxide; Magnetic films; Radio frequency; Resistance; Sputtering; Thin film transistors; Oxide semiconductor; sheet resistance; transmittance; transparent TFT;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158566
