Title :
Effects of internal electric field on efficiency of carrier multiplication solar cells
Author :
Hashimoto, Futo ; Mori, Nobuya
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
We study effects of electric-field dependence of carrier multiplication processes on the efficiency of p-n junction solar cells. We find that the short-circuit current-density is strongly enhanced when we take into account the bias-dependent carrier-multiplicity. The solar-cell efficiency is, however, weakly affected by the bias-dependence of the multiplicity.
Keywords :
current density; electric fields; p-n junctions; short-circuit currents; solar cells; bias-dependent carrier multiplicity; carrier multiplication process; internal electric field effect; p-n junction solar cell; short-circuit current density; P-n junctions; Photonics; Photovoltaic cells; Physics; Solar energy; Sun; Thermodynamics; carrier multiplication; impact ionization; solar cell; theory;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158573
