• DocumentCode
    722828
  • Title

    Temperature dependence of magnetoresistance characteristics of the on-state of resistive random access memory with ferromagnetic electrode

  • Author

    Ito, Daisuke ; Hamada, Yoshihumi ; Otsuka, Shintaro ; Shimizu, Tomohiro ; Shingubara, Shoso

  • Author_Institution
    Grad. Sch. of Sci. & Eng., Kansai Univ., Suita, Japan
  • fYear
    2015
  • fDate
    4-5 June 2015
  • Firstpage
    120
  • Lastpage
    121
  • Abstract
    Study of temperature dependence of magnetoresistance and I-V characteristics for the resistive random access memory with ferromagnetic electrode was carried out. The device exhibited bipolar operation mode. From temperature dependence of magnetoresistance of on-state, it is suggested that a very fine ferromagnetic conductive filament is formed.
  • Keywords
    electrochemical electrodes; magnetoresistance; resistive RAM; I-V characteristics; bipolar operation mode; ferromagnetic conductive filament; ferromagnetic electrode; magnetoresistance characteristics; resistive random access memory; temperature dependence; Electrodes; Hafnium compounds; Magnetoresistance; Nickel; Resistance; Temperature dependence; Temperature measurement; HfOx; Magnetoresistance; ReRAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-8614-9
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2015.7158579
  • Filename
    7158579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=722828