Title :
Discrete-type 24GHz SPDT FET switch for millimeter-wave WiCoPT
Author :
Hojo, Hiroya ; Ishizaki, Toshio
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
SPDT switch for 24GHz WiCoPT system was developed. GaAs HJ-FET molded in plastic package is used for cost reduction. In this case, electrical length between drain and source, and parasitic capacitance of package cannot be neglected. To solve this problem, quarter-wavelength transmission line is inserted in series to the transistor between output port and ground port. Although switching logic is reversed, effects of the length and the parasitic capacitance are included in the transmission line. Experimental SPDT switch was fabricated to compare the performance with that of conventional one. Insertion loss of 2.9dB, attenuation of 30.5dB and isolation of 26.5dB were obtained. Amazingly, insertion loss was improved by 1.4dB and attenuation was improved by 21dB. Thus, the effectiveness of the proposed circuit was confirmed.
Keywords :
III-V semiconductors; field effect transistor switches; gallium arsenide; millimetre wave field effect transistors; semiconductor device models; semiconductor device packaging; GaAs; GaAs HJ-FET mold; cost reduction; discrete-type SPDT FET switch; electrical length; frequency 24 GHz; loss 2.9 dB; millimeter-wave WiCoPT; parasitic capacitance; plastic package; power transfer; quarter-wavelength transmission line; reversed switching logic; wireless communication; Attenuation; Circuit topology; Insertion loss; Millimeter wave communication; Switches; Switching circuits; Transistors; 24GHz; Discrete transistor; GaAs HJ-FET; Plastic package; SPDT switch; WiCoPT;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158581
