Hybrid TTSV structure for heat mitigation and energy harvesting in 3D IC

Three Dimensional Integration seems to be one of the best candidates to overcome the various challenges and limitations faced by conventional planer integration. But, thermal issues related to this highly promising integration technique are the main bottleneck for wide scale application. This thermal issue threatens the further progress and development of the 3D IC. The best known possible way to reduce the heat generated within the integrated chip is cooling through the thermal through silicon via (TTSV). This work reports the utilization of time dependent fluctuation of temperature which is generated within the active layers of 3D IC. Pyroelectric effect of TTSV materials is used to convert the heat generated within 3D IC to electrical energy. 60K temperature fluctuation within the IC layer was used to convert as electrical energy and 9.89μW output power was observed. This paper reports the novelty of TTSV structure modification where TTSVs are used as simultaneous energy harvester and heat mitigator.