DocumentCode :
723186
Title :
Investigation of thermo-mechanical stresses and reliability of 3D die-stack structures by synchrotron x-ray micro-diffraction
Author :
Tengfei Jiang ; Peng Su ; Kim, Patrick ; Bassett, Cassie ; Sichak, Kevin ; Gandhi, Jaspreet ; Jian Li ; Im, Jay ; Rui Huang ; Ho, Paul S.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
fYear :
2015
fDate :
26-29 May 2015
Firstpage :
1718
Lastpage :
1724
Abstract :
In this work, thermo-mechanical stresses and reliability of 3D die-stack structures developed for the Hybrid Memory Cube (HMC) technology are investigated using experiments and modeling analysis. Synchrotron x-ray micro-diffraction measurements are used to directly measure the stress distribution around Cu vias in different die levels. High resolution stress mappings are obtained and verified by finite element analysis (FEA). The FEA is applied to estimate the stress effect on device mobility changes and the warpage of the integrated structure.
Keywords :
copper; finite element analysis; integrated circuit reliability; stacking; stress effects; synchrotrons; thermomechanical treatment; three-dimensional integrated circuits; 3D die-stack structures; Cu; FEA; HMC technology; device mobility; finite element analysis; high resolution stress mappings; hybrid memory cube technology; integrated structure; modeling analysis; reliability; stress effect; synchrotron X-Ray microdiffraction measurements; thermomechanical stresses; Random access memory; Reliability; Strain; Stress; Stress measurement; Three-dimensional displays; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/ECTC.2015.7159829
Filename :
7159829
Link To Document :
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