DocumentCode :
723227
Title :
Electromigration and thermal migration in Pb-free interconnects
Author :
Minhua Lu ; Wassick, Thomas ; Advocate, Gerald ; Backes, Ben
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2015
fDate :
26-29 May 2015
Firstpage :
2036
Lastpage :
2039
Abstract :
A set of experiments designed to understand the evolution of electromigration damage in Pb-free interconnects was conducted. It is found that the degree of EM damage is higher with increasing stress current and stress duration, and dependent on the closeness of the c-axis of the Sn grain to current direction. Controlling the solder texture is one of the key elements in improving EM lifetime. The effect of thermal gradient on solder reliability is studied by applying heat to the chip side of the solder joint. No thermal gradient induced migration is observed in Sn bumps with temperature gradients as high as 6.8×105 °C/m.
Keywords :
electromigration; integrated circuit interconnections; integrated circuit reliability; tin; Sn; current direction; electromigration damage; lead free interconnects; solder texture; thermal gradient; thermal migration; tin grain; Electromigration; Stress; Temperature sensors; Thermal resistance; Thermal stresses; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/ECTC.2015.7159882
Filename :
7159882
Link To Document :
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