Title :
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors
Author :
Palestri, P. ; Caruso, E. ; Driussi, F. ; Esseni, D. ; Lizzit, D. ; Osgnach, P. ; Venica, S. ; Selmi, L.
Author_Institution :
DIEG, Univ. of Udine, Udine, Italy
Abstract :
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor devices. We report examples of the use of the Multi-Subband Monte Carlo method to simulate MOSFETs with III-V compound semiconductor channel. Monte Carlo transport modeling of graphene-based transistors is also addressed.
Keywords :
III-V semiconductors; MOSFET; Monte Carlo methods; gallium arsenide; graphene devices; indium compounds; semiconductor device models; III-V compound semiconductor channel; In0.53Ga0.47As; MOSFET; advanced semiconductor devices; graphene-based transistors; multisubband Monte Carlo method; nanoscale transistors; semiclassical carrier transport; state-of-the-art semiclassical Monte Carlo method; Graphene; MOSFET; Monte Carlo methods; Phonons; Quantization (signal); Scattering; Semiconductor device modeling;
Conference_Titel :
Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2015 38th International Convention on
Conference_Location :
Opatija
DOI :
10.1109/MIPRO.2015.7160227
