Title :
Development and Evaluation of High-Stability Metal-Foil Resistor With a Resistance of 1
Author :
Domae, Atsushi ; Abe, Takayuki ; Kumagai, Masaya ; Zama, Matsuo ; Oe, Takehiko ; Kaneko, Nobu-hisa
Author_Institution :
Nat. Metrol. Inst. of Japan, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
Prototype models of a high-stability metal-foil resistor of 1 kΩ with a four-terminal-pair design were developed, and the key characteristics were evaluated. Two types of metalfoil resistors were fabricated: serial number (s/n) 1 is made from two resistor devices of 500 Ω and s/n 2 is made from three resistor devices of 333 Ω. To develop these resistor devices, a new resistor-device design was introduced. The s/n 1 resistor has the following key characteristics: drift rate: 0.010 (μΩ/Ω)/year, first-order temperature coefficient at 23 °C: -0.165 (μΩ/Ω)/°C, frequency dependence of the resistance (relative change in resistance normalized at 1 kHz): ±0.21 μΩ/Ω in the frequency range from 400 Hz to 2 kHz, and time constant: -0.46 ns. The s/n 2 resistor has the following key characteristics: drift rate: -0.092 (μΩ/Ω)/year, first-order temperature coefficient at 23 °C: 0.096 (μΩ/Ω)/°C, frequency dependence of the resistance (relative change in resistance normalized at 1 kHz): ±0.54 μΩ/Ω in the frequency range from 400 Hz to 2 kHz, and time constant: 0.12 ns.
Keywords :
circuit stability; thin film resistors; first-order temperature coefficient; four-terminal-pair design; frequency 400 Hz to 2 kHz; high-stability metal-foil resistor; resistance 1 kohm; resistance 333 ohm; resistance 500 ohm; temperature 23 degC; time -0.46 ns; time 0.12 ns; Electrical resistance measurement; Frequency dependence; Frequency measurement; Resistance; Resistors; Temperature dependence; Temperature measurement; Drift rate; electrical resistance measurement; frequency dependence; measurement standards; phase-angle measurements; resistors; temperature dependence; temperature dependence.;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.2015.2398955