Bias Dependence of Total-Dose Effects in Bulk FinFETs

Author

Chatterjee, I. ; Zhang, E.X. ; Bhuva, B.L. ; Alles, M.A. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Fang, Y.-P. ; Oates, A.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4476

Lastpage

4482

Abstract

The total ionizing dose response of triple-well FinFETs is investigated for various bias conditions. Experimental results show that irradiation with the transistor in the OFF state with the drain terminal high is the worst-case bias configuration. TCAD simulations are used to analyze the buildup of trapped charge in the trench isolation oxide and its impact on the increase in leakage current and subthreshold-slope degradation. The electric field distribution along the STI/fin boundary exerts a strong influence on the trapped charge in the isolation oxide, which induces a parasitic leakage current path at total ionizing doses of less than 200 krad(SiO₂).

Keywords

MOSFET; leakage currents; radiation hardening (electronics); technology CAD (electronics); OFF state; STI-fin boundary; TCAD simulations; bias dependence; bulk FinFET; drain terminal; electric field distribution; irradiation; leakage current; parasitic leakage current path; subthreshold-slope degradation; total ionizing dose response; total ionizing doses; total-dose effects; trapped charge buildup; trench isolation oxide; triple-well FinFET; Annealing; Charge carrier processes; FinFETs; Leakage currents; Radiation effects; Threshold voltage; FinFET; room-temperature anneal; subthresholdslope; threshold voltage shift; total ionizing dose; worst-case bias condition;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2287872

Filename

6678276