DocumentCode
724792
Title
Low Drift Zener-based voltage reference
Author
Marinca, Stefan ; Bucur, Viorel
Author_Institution
Analog Devices Int., Limerick, Ireland
fYear
2015
fDate
24-25 June 2015
Firstpage
1
Lastpage
4
Abstract
This paper presents an alternative architecture for a Monolithic IC Buried Zener-type voltage reference implemented on a 0.6μm BICMOS process. Low supply voltage, good power supply rejection, reduced process dependency, low Long Term Drift (LTD) with capability of an easy and effective Temperature Coefficient (TC) trim are all features of the presented architecture. Good simulated performance and very promising silicon results with standard deviation of 9.31mV, a mean value of 4.786V and temperature coefficient after trimming of less than 1.5ppm/°C were obtained for all tested parts.
Keywords
BiCMOS integrated circuits; Zener diodes; monolithic integrated circuits; reference circuits; BICMOS process; LTD; long term drift; low drift Zener; monolithic IC buried Zener-type voltage reference; size 0.6 mum; temperature coefficient trim; voltage 4.786 V; voltage 9.31 mV; Analog integrated circuits; Bipolar transistors; Computer architecture; Current density; Silicon; Temperature; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals and Systems Conference (ISSC), 2015 26th Irish
Conference_Location
Carlow
Type
conf
DOI
10.1109/ISSC.2015.7163778
Filename
7163778
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