DocumentCode :
725089
Title :
In-line inspection of DRC generated Hotspots
Author :
Srivastava, Amit ; Nguyen, Hoang ; Hermann, Thomas ; Kirsch, Remo ; Kini, Rajeev
Author_Institution :
DFM, GlobalFoundries Inc., Malta, NY, USA
fYear :
2015
fDate :
3-6 May 2015
Firstpage :
336
Lastpage :
339
Abstract :
Design Hotspots are features on a silicon chip, which are susceptible to pattern failures. While multiple methods like DRC, ORC and CFM inspection are used to identify these Hotspots, in-line monitoring of these design Hotspots has remained a challenge. Existing methods of Hotspot inspection, which include API and EBI are not suited for large scale inspection due to system limitations and throughput limitations respectively. NanoPoint inspection, which is a recent advance in BBP inspection, has enabled in-line inspection of Design Hotspots at very high throughput. In this paper, a methodology for in-line inspection of Design Hotspots using NanoPoint BBP inspection is presented.
Keywords :
design for manufacture; inspection; semiconductor technology; DRC generated hotspots; in-line inspection; nanopoint inspection; pattern failures; Analytical models; Inspection; Metals; Semiconductor device modeling; Silicon; Systematics; Throughput; DRC; Design Hotspot; NanoPoint; in-line defect inspection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
Conference_Location :
Saratoga Springs, NY
Type :
conf
DOI :
10.1109/ASMC.2015.7164415
Filename :
7164415
Link To Document :
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