300mm wafer level sulfur monolayer doping for III–V materials

Author

Loh, W.-Y. ; Lee, R.T.P. ; Tieckelmann, R. ; Orzali, T. ; Sapp, B. ; Hobbs, C. ; Papa Rao, S.S. ; Fuse, K. ; Sato, M. ; Fujiwara, N. ; Chang, L. ; Uchida, H.

Author_Institution

SEMATECH, Albany, NY, USA

fYear

2015

fDate

3-6 May 2015

Firstpage

451

Lastpage

454

Abstract

We have demonstrated sulfur monolayer doping (MLD) of In(53%)GaAs on III-V buffer/Si substrate at 300mm wafer scale and obtained sheet resistance of 303 ohms/sq with 8% uniformity. Mono-layer doping was achieved via molecular doping of sulfur and conventional annealing for dopant drive-in. Chemical reactivity, cost, environmental, safety and health aspects (all of which are crucial for high volume manufacturing) were considered in the chemical down-selection. MLD demonstrates molecular-scale control with conformal, nondestructive introduction of dopants to III-V materials.

Keywords

III-V semiconductors; annealing; elemental semiconductors; gallium arsenide; indium compounds; semiconductor doping; silicon; III-V materials; InGaAs; Si; annealing; chemical reactivity; dopant drive-in; molecular doping; sheet resistance; size 300 mm; wafer level sulfur monolayer doping; Annealing; Chemicals; Doping; Indium gallium arsenide; Junctions; Silicon; Monolayer Doping; Nanoscale; Shallow Junctions;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI

Conference_Location

Saratoga Springs, NY

Type

conf

DOI

10.1109/ASMC.2015.7164438

Filename

7164438