DocumentCode
725109
Title
Nanoparticle reduction in Cu CMP for 20nm node and beyond
Author
Jeanjean, Damien ; Robin, Olivier ; Sramek, Rurh ; Mermoz, Sebastien ; Ducotey, Gregoire ; Gaillard, Sebastien ; Yufei Chen ; Pitard, Frederic ; Nicoud, Laurent ; Brown, Brian
Author_Institution
STMicroelectron., Grenoble, France
fYear
2015
fDate
3-6 May 2015
Firstpage
1
Lastpage
5
Abstract
A high yield copper damascene process requires defect-free copper surfaces after Cu CMP. In this paper we present a novel technique to improve cleaning efficiency, especially the removal of particles in the range of 20 to 80nm. This innovative Chemical Mechanical Cleaning (CMC) approach is validated with defect density reduction and a significant reduction of electrical shorts measured on test wafers.
Keywords
chemical mechanical polishing; cleaning; copper; nanoparticles; CMP; Cu; chemical mechanical cleaning; cleaning efficiency; defect density reduction; defect-free copper surfaces; electrical shorts; nanoparticle reduction; test wafers; Brushes; Chemicals; Cleaning; Metals; Slurries; Surface treatment; CMP Process; Chemical Mechanical Cleaning; Copper Cleaning; Defect Control; Nanoparticle Detection;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
Conference_Location
Saratoga Springs, NY
Type
conf
DOI
10.1109/ASMC.2015.7164440
Filename
7164440
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