Title :
Nanoparticle reduction in Cu CMP for 20nm node and beyond
Author :
Jeanjean, Damien ; Robin, Olivier ; Sramek, Rurh ; Mermoz, Sebastien ; Ducotey, Gregoire ; Gaillard, Sebastien ; Yufei Chen ; Pitard, Frederic ; Nicoud, Laurent ; Brown, Brian
Author_Institution :
STMicroelectron., Grenoble, France
Abstract :
A high yield copper damascene process requires defect-free copper surfaces after Cu CMP. In this paper we present a novel technique to improve cleaning efficiency, especially the removal of particles in the range of 20 to 80nm. This innovative Chemical Mechanical Cleaning (CMC) approach is validated with defect density reduction and a significant reduction of electrical shorts measured on test wafers.
Keywords :
chemical mechanical polishing; cleaning; copper; nanoparticles; CMP; Cu; chemical mechanical cleaning; cleaning efficiency; defect density reduction; defect-free copper surfaces; electrical shorts; nanoparticle reduction; test wafers; Brushes; Chemicals; Cleaning; Metals; Slurries; Surface treatment; CMP Process; Chemical Mechanical Cleaning; Copper Cleaning; Defect Control; Nanoparticle Detection;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2015.7164440
