Title :
Effect of top corner rounding in BEOL to yield in advanced technologies
Author :
Ramanathan, Eswar ; Silvestre, Mary Claire ; Mahalingam, Anbu Selvam Km ; Garg, Niti ; Siddhartha, Siddhartha ; Ordonio, Christopher ; Schaller, John
Author_Institution :
GLOBALFOUNDRIES, Malta, NY, USA
Abstract :
In advanced technologies as the dimensions shrink, even the slight change in profiles can cause issues in BEOL integration. This paper discusses the effect of dielectric profile on product yield. Even though these issues were not seen on standard monitoring structures, the issue has been observed in products of very complicated design structures. The yield losses for this failure mechanism range from 10% to 20%. The fails being more of a functional fail than a physical failure made the problem even more complicated. Here we discuss how the issue was identified by data mining, followed by in depth investigation on individual module and understanding the interactions. By understanding the interaction between process modules, an optimized and manufacturable solution was derived and implemented. The issue was addressed by optimizing the film treatment and the wet-clean optimization, as an integrated module approach. Yield was verified on this optimized process and proven.
Keywords :
data mining; dielectric materials; integrated circuit yield; BEOL; data mining; dielectric profile; dimensions shrink; failure mechanism; film treatment; functional fail; integrated module approach; process modules; product yield; wet-clean optimization; yield losses; Chemistry; Dielectrics; Films; Lithography; Monitoring; Process control; Surface treatment; Film treatment; Integrated approach; Pre wet; Spin speed; Top Corner Rounding; Wet cleans; Yield loss;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2015.7164453