CD metrology for EUV lithography and etch

Author

Johanesen, Hayley ; Kenslea, Anne ; Williamson, Mark ; Knowles, Matt ; Kwakman, Laurens ; Levi, Shimon ; Nishry, Noam ; Adan, Ofer ; Englard, Ilan ; Van Puymbroeck, Jan ; Felder, Dan ; Gov, Shahar ; Cohen, Oded ; Turovets, Igor

Author_Institution

FEI, Acht, Netherlands

fYear

2015

fDate

3-6 May 2015

Firstpage

329

Lastpage

335

Abstract

Measurement and control of lithography and etch process windows requires continuous advancements in process monitoring metrology. High volume, in-line metrology techniques such as CD-SEM and scatterometry need to be accurate, reproducible and sensitive to process variations at (sub) nm level. To ensure adequate metrology capabilities, these high volume metrology techniques can benefit from reference metrology such as STEM and novel approaches such as hybrid metrology to reduce the total measurement uncertainty (TMU).

Keywords

etching; integrated circuit measurement; measurement uncertainty; nanolithography; process monitoring; scanning electron microscopy; ultraviolet lithography; CD metrology; CD-SEM; EUV lithography; STEM; TMU; critical line dimension; etch process; extreme ultraviolet lithography; in-line metrology technique; process monitoring metrology; process variation; scatterometry; total measurement uncertainty; Correlation; Lithography; Metrology; Radar measurements; Resists; Silicon; Ultraviolet sources; CD metrology; CD-SEM; EUV patterning; LER; LWR; OCD; STEM; accuracy; reproducibility;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI

Conference_Location

Saratoga Springs, NY

Type

conf

DOI

10.1109/ASMC.2015.7164505

Filename

7164505