A 340 GHz MMIC 4× sub-harmonic mixer using silicon-based Schottky barrier diodes

Author

Chao Liu ; Qiang Li ; Yong-Zhong Xiong

Author_Institution

Intergrated Syst. Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2015

fDate

March 30 2015-April 1 2015

Firstpage

1

Lastpage

4

Abstract

The terahertz 4 × sub-harmonic down-mixer fabricated in standard 0.13μm SiGe BiCMOS Schottky barrier diodes is demonstrated. The 340 GHz sub-harmonic mixer (SHM) is designed based on anti-parallel-diode-pair (APDP). With the 4th harmonic, LO frequency of 85 GHz is used to pump the 340GHz SHM. With LO power of 9dBm, the mixer exhibits measured conversion loss of 39-43dB in the lower band (320-340 GHz) and 40-48dB in the upper band (340-360 GHz). The measured input 1dB conversion gain compression point is -10dBm at RF frequency of 325 GHz. LO-IF isolation is measured to be 32dB at 85 GHz. The chip occupies 550μm× 610μm including the testing pads.

Keywords

CMOS integrated circuits; MMIC mixers; Schottky barriers; Schottky diode mixers; millimetre wave mixers; silicon compounds; submillimetre wave mixers; 4th harmonic; APDP; LO frequency; MMIC subharmonic mixer; SHM; SiGe; SiGe BiCMOS Schottky barrier diode; antiparallel diode pair; frequency 320 GHz to 360 GHz; frequency 85 GHz; loss 39 dB to 48 dB; size 0.13 mum; terahertz subharmonic downmixer fabrication; Frequency measurement; Loss measurement; Mixers; Noise measurement; Power measurement; Radio frequency; Schottky barriers; Terahertz sub-harmonic mixer Schottky diode APDP;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2015 IEEE International

Conference_Location

Shenzhen

Type

conf

DOI

10.1109/IEEE-IWS.2015.7164514

Filename

7164514