Title :
A 2 to 92 GHz distributed amplifier using 70-nm InP HEMTs
Author :
Yihu Li ; Wang-Ling Goh ; Yong-Zhong Xiong
Author_Institution :
Nanyang Technol. Univ., Singapore, Singapore
fDate :
March 30 2015-April 1 2015
Abstract :
This paper presents a broad band distributed amplifier (DA). The amplifying cell utilizes the cascode structure with transistor dimension mismatch. With different sizes of the transistor used, the input and output capacitance will be more balanced and hence, better impedance matching is achieved for the designed DA. 70 nm InP HEMTs are used to fabricate the proposed design, the total chip area occupied is 2.9mm×0.85mm including the bonding pads. The DA achieves a band width of 2 to 82 GHz, with the average gain of 21 dB. The total power consumption of the DA is 300 mW with a power supply voltage of 2 V.
Keywords :
III-V semiconductors; UHF amplifiers; high electron mobility transistors; impedance matching; indium compounds; microwave amplifiers; millimetre wave amplifiers; wideband amplifiers; DA; HEMT; InP; bonding pad; broad band distributed amplifier; frequency 2 GHz to 92 GHz; impedance matching; power consumption; size 70 nm; CMOS integrated circuits; CMOS technology; Distributed amplifiers; Gain; III-V semiconductor materials; Indium phosphide; Transistors; broad band; cascode; distributed amplifier; transistor mismatch;
Conference_Titel :
Wireless Symposium (IWS), 2015 IEEE International
Conference_Location :
Shenzhen
DOI :
10.1109/IEEE-IWS.2015.7164547
