Title :
A ultra-wideband CMOS PA with dummy filling for reliability
Author :
Yu-Ting Chang ; Yu Ye ; Domier, Calvin ; Gu, Qun Jane
Author_Institution :
Univ. of California, Davis, Davis, CA, USA
fDate :
March 30 2015-April 1 2015
Abstract :
This paper presents a V-band power amplifier in a bulk 65 nm CMOS technology with the peak gain 14.5 dB and 3-dB bandwidth of 28.8 GHz (50.8 GHz to 79.6 GHz). The PA has demonstrated 15.1 dBm Psat and 18.9 % peak PAE. The PA features three stage transformer coupled differential architecture with integrated input and output baluns. The entire PA core occupies 0.31 mm2 chip area and dissipates about 150 mW.
Keywords :
CMOS integrated circuits; power amplifiers; CMOS technology; V-band power amplifier; dummy filling; integrated input baluns; integrated output baluns; transformer coupled differential architecture; ultrawideband CMOS PA; CMOS integrated circuits; CMOS technology; Capacitance; Filling; Frequency measurement; Gain; Impedance; CMOS; V-band; power amplifier; transformer;
Conference_Titel :
Wireless Symposium (IWS), 2015 IEEE International
Conference_Location :
Shenzhen
DOI :
10.1109/IEEE-IWS.2015.7164562
