V-band high gain SiGe power amplifier with wideband ESD protection

Author

Keping Wang ; Kaixue Ma ; Kiat Seng Yeo

Author_Institution

Wireless Sensing Lab., Univ. of Washington, Seattle, WA, USA

fYear

2015

fDate

March 30 2015-April 1 2015

Firstpage

1

Lastpage

4

Abstract

This paper presents a low-power high-gain V-band power amplifier (PA) in a low-cost commercial 0.18-μm SiGe BiCMOS technology. A novel wideband ESD protection circuit is demonstrated with <;1 dB insertion loss in frequency range of 17-88 GHz. Design techniques utilized to optimize the gain and the power consumption are addressed. In the 60GHz frequency range, the designed PA achieves a peak gain of 20.8 dB under 1.8 V supply and 25.3 dB under 2.4 V supply respectively. The input return loss is better than -10 dB from 50 GHz to 75 GHz. It delivers 8.4 dBm saturated output power at 67 GHz with a 2.4 V supply. TLP measurement result shows that the voltage is clamped below 6 V even under 10 A ESD current.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; electrostatic discharge; millimetre wave power amplifiers; power amplifiers; BiCMOS technology; SiGe; V-band high gain power amplifier; frequency 17 GHz to 88 GHz; frequency 67 GHz; gain 20.8 dB; gain 25.3 dB; input return loss; size 0.18 mum; voltage 2.4 V; wideband ESD protection; Electrostatic discharges; Gain; Gain measurement; Narrowband; Silicon germanium; Standards; ESD; SiGe BiCMOS; V-band; millimeter-wave; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2015 IEEE International

Conference_Location

Shenzhen

Type

conf

DOI

10.1109/IEEE-IWS.2015.7164569

Filename

7164569