Title :
V-band high gain SiGe power amplifier with wideband ESD protection
Author :
Keping Wang ; Kaixue Ma ; Kiat Seng Yeo
Author_Institution :
Wireless Sensing Lab., Univ. of Washington, Seattle, WA, USA
fDate :
March 30 2015-April 1 2015
Abstract :
This paper presents a low-power high-gain V-band power amplifier (PA) in a low-cost commercial 0.18-μm SiGe BiCMOS technology. A novel wideband ESD protection circuit is demonstrated with <;1 dB insertion loss in frequency range of 17-88 GHz. Design techniques utilized to optimize the gain and the power consumption are addressed. In the 60GHz frequency range, the designed PA achieves a peak gain of 20.8 dB under 1.8 V supply and 25.3 dB under 2.4 V supply respectively. The input return loss is better than -10 dB from 50 GHz to 75 GHz. It delivers 8.4 dBm saturated output power at 67 GHz with a 2.4 V supply. TLP measurement result shows that the voltage is clamped below 6 V even under 10 A ESD current.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; electrostatic discharge; millimetre wave power amplifiers; power amplifiers; BiCMOS technology; SiGe; V-band high gain power amplifier; frequency 17 GHz to 88 GHz; frequency 67 GHz; gain 20.8 dB; gain 25.3 dB; input return loss; size 0.18 mum; voltage 2.4 V; wideband ESD protection; Electrostatic discharges; Gain; Gain measurement; Narrowband; Silicon germanium; Standards; ESD; SiGe BiCMOS; V-band; millimeter-wave; power amplifier;
Conference_Titel :
Wireless Symposium (IWS), 2015 IEEE International
Conference_Location :
Shenzhen
DOI :
10.1109/IEEE-IWS.2015.7164569
