Title :
SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay
Author :
Heinemann, B. ; Rucker, Holger ; Barth, R. ; Drews, J. ; Fursenko, O. ; Grabolla, T. ; Kurps, R. ; Marschmeyer, S. ; Scheit, A. ; Schmidt, Dan ; Trusch, A. ; Wolansky, Dirk ; Yamamoto, Yusaku
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
SiGe p-n-p heterojunction bipolar transistors (HBTs) are presented with fT/fmax values of 175 GHz/265 GHz and a minimum current mode logic ring oscillator gate delay of 3.65 ps. The devices are fabricated in an experimental p-n-p 0.25-μm BiCMOS process environment adopting the transistor design of an advanced n-p-n HBT module. The improved RF performance compared with previously reported p-n-p HBTs was enabled by low-temperature disilane-based epitaxial processes, careful base-profile engineering, the realization of low-ohmic collector and emitter layers, and by avoiding thermal treatments higher than 650 °C between base epitaxy and final RTP.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; p-n heterojunctions; SiGe; SiGe p-n-p heterojunction bipolar transistors; advanced n-p-n HBT module; base epitaxy; base-profile engineering; emitter layers; experimental p-n-p 0.25-μm BiCMOS process environment; final RTP; frequency 175 GHz; frequency 265 GHz; low-ohmic collector; low-temperature disilane-based epitaxial processes; minimum current mode logic ring oscillator gate delay; size 0.25 mum; time 3.65 ps; transistor design; BiCMOS integrated circuits; Delays; Epitaxial growth; Heterojunction bipolar transistors; Logic gates; Silicon germanium; Heterojunction bipolar transistors (HBTs); high-speed devices; ring oscillators; ring oscillators.; silicon-germanium (SiGe);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2330659
