Title :
Thermal Neutron-Induced Soft Errors in Advanced Memory and Logic Devices
Author :
Yi-Pin Fang ; Oates, Anthony S.
Author_Institution :
Semicond. Manuf. Co., Hsinchu, Taiwan
Abstract :
Thermal neutron-induced soft errors (SERs) for memory and logic devices have reappeared as a reliability issue for advanced IC technologies due to the presence of the B10 isotope in B2H6 carrier gases used during manufacturing. Here, we show that thermal neutron SER significantly decreases with Si technology progression, becoming an insignificant contributor to overall circuit SER below the 28-nm technology node.
Keywords :
SRAM chips; logic devices; radiation hardening (electronics); advanced IC technologies; advanced memory devices; carrier gases; logic devices; reliability issue; thermal neutron induced soft errors; Alpha particles; Clocks; Integrated circuit modeling; Materials reliability; Neutrons; Silicon; Transistors; Thermal neutron; alpha; high-energy neutron; single event upset (SEU); soft error; soft error rate;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2013.2287699
