Title :
Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations
Author :
Oshima, Azusa ; Weckx, Pieter ; Kaczer, Ben ; Kobayashi, Kazutoshi ; Matsumoto, Takashi
Author_Institution :
Dept. of Electron., Kyoto Inst. of Technol., Kyoto, Japan
Abstract :
Random Telegraph Noise (RTN) has become dominant with transistor rapid scaling in recent years. We simulate RTN-induced frequency fluctuation of Ring Oscillators (ROs) using a circuit-level simulator to replicate measurement results from previous works. Consequently, we can predict dependences of frequency fluctuation on operating voltages, number of ROs stages, gate widths, and body biases.
Keywords :
circuit simulation; oscillators; random noise; transistor circuits; RTN-induced frequency fluctuation; body biases; circuit-level simulations; circuit-level simulator; gate widths; random telegraph noise; ring oscillators; transistor rapid scaling; Fluctuations; Integrated circuit modeling; Logic gates; Noise; Threshold voltage; Time-frequency analysis; Random Telegraph Noise; Reliability; Ring Oscillator; Variability;
Conference_Titel :
IC Design & Technology (ICICDT), 2015 International Conference on
Conference_Location :
Leuven
DOI :
10.1109/ICICDT.2015.7165891
