I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration

Author

Ritzenthaler, R. ; Schram, T. ; Cho, M.J. ; Mocuta, A. ; Horiguchi, N. ; Thean, A.V.-Y. ; Spessot, A. ; Caillat, C. ; Aoulaiche, M. ; Fazan, P. ; Noh, K.B. ; Son, Y.

Author_Institution

imec, Leuven, Belgium

fYear

2015

fDate

1-3 June 2015

Firstpage

1

Lastpage

4

Abstract

In this work, the potential of the recently demonstrated D&GR (Diffusion & Gate Replacement, [5]) for thick oxide I/O devices integration is investigated. A D&GR integration flow compliant with EOT requirements for I/O devices is demonstrated, with no penalty with regard to HKMG Non D&GR flow in terms of short channel effects and intrinsic transistor performance. Threshold voltage tuning options from 150 up to 300 mV are demonstrated, and one preferred integration route (keeping the same work function shifters for both thin and thick oxide devices) is highlighted. Finally, it is also shown that HKMG I/O devices (D&GR and non D&GR) do not suffer from reverse narrow gate width effects.

Keywords

MOSFET; diffusion; input-output programs; semiconductor device models; D&GR integration flow compliant; EOT requirements; HKMG I-O devices; HKMG Non D&GR flow; diffusion & gate replacement; integration route; reverse narrow gate width effects; short channel effects; thick oxide I-O devices integration; thin oxide devices; threshold voltage tuning options; voltage 150 mV to 300 mV; work function shifters; High K dielectric materials; Logic gates; MOS devices; Metals; Random access memory; Threshold voltage; Transistors; Al2O3 capping layers; DRAM periphery transistors; Diffusion and Gate Replacement (D&GR); High-k; I/O devices; Metal gate; Mg capping layers;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design & Technology (ICICDT), 2015 International Conference on

Conference_Location

Leuven

Type

conf

DOI

10.1109/ICICDT.2015.7165908

Filename

7165908