ESD protection diodes in optical interposer technology

The ESD robustness of planar Si and Ge diodes on Silicon-on-Insulator (SOI) optical interposer is studied by using TLP and vfTLP system. Although Ge diodes show a lower failure current, a superior clamping capability with a resistance lowering behavior, which is attributed to the intrinsic material properties of Ge, makes Ge diodes possess a promising potential for ESD protections.