Title :
Preliminary 3D TCAD electro-thermal simulations of BIMOS transistor in thin silicon film for ESD protection in FDSOI UTBB CMOS technology
Author :
Athanasiou, S. ; Cristoloveanu, S. ; Galy, Ph
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
The purpose of this paper is to analyze the ESD device electro-thermal behavior of BIMOS transistors integrated in ultrathin silicon film for 28 nm FDSOI UTBB high-k metal gate technology. This evaluation is based on 3D TCAD simulations with classical physical models using Average Current Slope (ACS) method and quasi-static DC stress (Average Voltage Slope (AVS) method). We show how the series resistance and the thermal resistance impact the average and peak temperatures in these devices.
Keywords :
CMOS integrated circuits; MOSFET; bipolar transistors; electrostatic discharge; 3D TCAD electro-thermal simulations; BIMOS transistor; ESD protection; FDSOI UTBB CMOS technology; average current slope method; average voltage slope method; high-K metal gate technology; quasistatic dc stress; size 28 nm; ultrathin silicon film; BiCMOS integrated circuits; Electrostatic discharges; Mathematical model; Silicon; Stress; Thermal resistance; Transistors; BIMOS transistor; CMOS; ESD protection; FDSOI;
Conference_Titel :
IC Design & Technology (ICICDT), 2015 International Conference on
Conference_Location :
Leuven
DOI :
10.1109/ICICDT.2015.7165913
