Title :
Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate Length
Author :
Barraud, S. ; Coquand, R. ; Hartmann, J.-M. ; Maffini-Alvaro, V. ; Samson, M.-P. ; Tosti, L. ; Allain, F.
Author_Institution :
LETI, Commissariat a l´Energie Atomique et aux Energies Alternatives, Grenoble, France
Abstract :
Ultrashort gate length silicon-on-insulator nanowire (NW) transistors with embedded source/drain (S/D) SiGe stressors were fabricated. An enhancement of P-FET NW performance is achieved using in situ HCl+GeH4 etching and selective epitaxial growth of boron-doped Si0.7Ge0.3 for the formation of recessed S/D. For the first time, an ION current improvement of +100% along the 〈110〉 direction induced by SiGe S/D is achieved in Omega-FET NWs down to 13-nm gate length. The current enhancement coming from uniaxial compressive strain of recessed SiGe S/D stressors in narrow-channel transistors is well demonstrated (+100% versus +40% in wide planar FET).
Keywords :
boron; compressive strength; epitaxial growth; etching; field effect transistors; nanowires; semiconductor doping; silicon compounds; silicon-on-insulator; NW transistors; P-FET NW performance; P-FET omega-gate SoI nanowire; Si0.7Ge0.3; boron-doped silicon germanide; current enhancement; embedded source/drain stressors; etching; narrow-channel transistors; omega-FET NW; selective epitaxial growth; size 13 nm; source-drain; ultrashort gate length silicon-on-insulator nanowire transistors; uniaxial compressive strain; wide planar FET; Etching; Logic gates; MOSFET; Silicon; Silicon germanium; Strain; Embedded SiGe source-drain; MOSFET; nanowire; omega-gate; silicon-on-insulator (SoI); uniaxial compressive strain;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2274172
