DocumentCode :
725965
Title :
A novel in-situ calibration technique for a high resolution E-Field probe
Author :
Dehghan, N. ; Cripps, S.C.
Author_Institution :
Cardiff Univ., Cardiff, UK
fYear :
2015
fDate :
17-22 May 2015
Firstpage :
1
Lastpage :
3
Abstract :
The potential of E-Field probes as diagnostic tools in operational microwave circuits and devices has been widely recognised but little used. Progress in this area has always been hampered by the lack of an absolute calibration technique. As such, these measurements are usually only useful for relative measurements over a range of electrical conditions where the probe remains stationary. This paper describes a probe design which can be calibrated in-situ each time the probe is moved. The calibration technique is demonstrated by measurements of RF waveforms at the device plane of a medium power (10W) GaAs PHEMT power amplifier.
Keywords :
III-V semiconductors; calibration; electric field measurement; electric sensing devices; frequency measurement; gallium arsenide; high electron mobility transistors; power amplifiers; GaAs; PHEMT power amplifier; RF waveform measurement; high resolution E-field probe; in-situ calibration technique; operational microwave circuit; operational microwave device; power 10 W; Electron tubes; Logic gates; PHEMTs; Probes; Size measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/MWSYM.2015.7166745
Filename :
7166745
Link To Document :
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